Abstract
Co-Sensitized Tio2 Photoelectrodes by Multiple Semiconductors (Pbs/Pb0.05cd0.95s/Cds) to Enhance the Performance of A Solar Cell
Supriyono1,2, Ahmad Zakaria1, Yuni Krisyuningsih Krisnandi2 and Jarnuzi Gunlazuardi2
DOI : http://dx.doi.org/10.13005/ojc/330515
Abstract:
The effect of PbS/Pb0.05Cd0.95S/CdS co-sensitization on the quantum dot-sensitized solar cell performance have been investigated. In this research, a TiO2 nanoparticles was prepared by a sol gel method and immobilized to the FTO (fluorine tin oxide) substrate by dip coating technique. The formation of PbS, Pb0.05Cd0.95S, and CdS quantum dots (QDs) sensitized TiO2 photoelectrode was carried out by successive ionic layer adsorption and reaction (SILAR) method. The as-prepared materials were characterized by scanning electron microscopy, energy dispersive spectroscopy, X-ray diffraction, and X-ray photoelectron spectroscopy. Our photoelectrochemical evaluation indicated that the photocurrent of PbS/Pb0.05Cd0.95S/CdS multiple semiconductor (0.363 mA/cm2) is higher than the CdS single sensitizer (0.190 mA/cm2), resulting an increase in a photocurrent of 91%. Under 3.5 mW/cm2 illumination, we found that this photoelectrodes have an optimum short-circuit photocurrent density (Isc) of 0.429 mA/cm2 and energy conversion efficiency of 1.42%, which is 160% higher than that of a CdS single sensitizer (0.54%). The excellent photoelectrochemical properties of our photoanode, suggest that the TiO2 films co-sensitized by PbS/Pb0.05Cd0.95S/CdS quantum dots have potential application in a solar cells.
Keywords:solar cell; quantum dots; SILAR method; co-sensitization
Back to TOC