Abstract

T. SH. Koshkarbaeva, S. Z. Nauryzova, M. S. Sataev and A. B. Tleuova

We developed the technology of applying the conductive films of copper phosphide on the dielectric materials in order to obtain a basis for further metallization. This technology is based on use of phosphine as reducing agent, which can restore the connections of copper to phosphide. 

Dielectrics; Low Temperature; Gas-phase

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