Abstract

R. M. Nikam^1*, A. P. Patil², K. H. Kapadnis³, A. D. Ahirrao⁴ and R.Y.Borse⁵

DOI : http://dx.doi.org/10.13005/ojc/370515

There are numerous methods has been investigated and developed for the preparation of thin and thick films. Thick film technology is utilized for the production of electronic devices like surface mount devices, in the preparation of hybrid integrated circuit, in the formulation of heating elements, in the construction of integrated passive devices and sensors. Pure tin oxide (SnO2) and composite 1%, 3%, 5%, 7% and 9 % zirconium oxide (ZrO2) thick films of dimensions 2 cm×1 cm incorporated into pure tin oxide (SnO2) were prepared with standard screen printing method. All samples were fabricated on glass support. The thick films were subjected to drying and firing at 5000C at 5 hours in muffle furnace. Thick films of tin oxide (SnO2) and composite 1%, 3%, 5%, 7% and 9 % zirconium oxide (ZrO2) incorporated into pure tin oxide (SnO2) were checked for Scanning Electron Microscopy (S.E.M), Energy Dispersive X-ray Spectroscopy (E.D.A.X), X-ray diffraction (X.R.D), Fourier Transform infra-Red (F.T.I.R) and Ultra-Violet-Visible spectroscopy (U.V) for surface morphology, elemental analysis, crystalline phases of films, vibrational and spectrophotometric study respectively. In this research paper the spectrophotometric parameters such as absorbance and absorption coefficient with pure and compositional thick films were a part of investigation and surveillance.

Absorption Coefficient; Electronic Devices; Morphology; Thick Films; Tin Oxide

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